Modelling of the PVT-SiC bulk growth process taking into account global heat transfer, mass transport and heat of crystallization and results on its experimental verification

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 57-60

  Muller St G ^a   Eckstein, R ^a   Hofmann, D ^a   Kadinski, L ^a   Kaufmann, P ^a   Kolbl M ^a   Schmitt, E ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Global Heat Transfer; Numerical Modelling; PVT Growth

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; HEAT TRANSFER; MASS TRANSFER; PHASE INTERFACES; POWDERS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

LATENT HEAT; PHYSICAL VAPOR TRANSPORT (PVT); STEFAN FLUX;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 3743138385     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.57     Document Type: Article

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