Existence of a stable intermixing phase for monolayer Ge on Si(001)

Surface Science

Volumn 381, Issue 1, 1997, Pages

  Yeom, H W ^a,c   Sasaki, M ^a,d   Suzuki, S ^a   Sato, S ^a   Hosoi, S ^b   Iwabuchi, M ^b   Higashiyama, K ^b   Fukutani, H ^b   Nakamura, M ^a   Abukawa, T ^a   Kono, S ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d Canon ANELVA Technix Corporation   (Japan)

Author keywords

Auger electron diffraction; Germanium; Growth; Low energy electron diffraction (LEED); Low index single crystal surfaces; Silicon; Single crystal epitaxy; X ray photoelectron spectroscopy

Indexed keywords

ADSORPTION; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

X RAY EXCITED AUGER ELECTRON DIFFRACTION;

SEMICONDUCTING GERMANIUM;

EID: 0031162836     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00047-2     Document Type: Article

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