Capacitance-voltage characterization of atomic-layer-deposited Al 2O3/InGaAs and Al2O3/GaAs metal-oxide-semiconductor structures

ECS Transactions

Volumn 3, Issue 3, 2006, Pages 59-69

  Xuan, Y ^a   Lin, H C ^a   Ye, P D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINA; CAPACITANCE MEASUREMENT; CURRENT DENSITY; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THIN FILMS; VOLTAGE MEASUREMENT;

FREQUENCY DISPERSION; LEAKAGE CURRENT DENSITY; MINORITY CARRIERS; SURFACE RECOMBINATION;

MOSFET DEVICES;

EID: 33846945828     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355699     Document Type: Conference Paper

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