Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures

Journal of Crystal Growth

Volumn 310, Issue 10, 2008, Pages 2476-2479

  Ji, L W ^a   Young, S J ^b   Liu, C H ^a   Water, W ^a   Meen, T H ^a   Jywe, W Y ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Nanostructures; B2. Semiconducting II VI materials; B3. Light emitting diodes

Indexed keywords

ELECTRIC BREAKDOWN; LIGHT EMITTING DIODES; NANOSTRUCTURES; NITRIDES; SEMICONDUCTOR QUANTUM DOTS;

INCIDENT WAVELENGTH; OPTOELECTRONIC INTEGRATED CIRCUIT;

PHOTODIODES;

EID: 42249115839     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.01.028     Document Type: Article

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