Growth and characterization of GaN-based structures on SiCOI-engineered substrates

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 500-505

  Dikme, Y ^a   Van Gemmern, P ^a   Lin, Y C ^a,f   Szymakowski, A ^a   Kalisch, H ^a   Faure, B ^b   Richtarch, C ^b   Larheche H ^c   Bove, P ^c   Letertre, F ^b   Woitok, J F ^d   Efthimiadis, K ^e   Jansen, R H ^a   Heuken, M ^a,e  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c Picogiga International   (France)

^d MALVERN INSTRUMENTS LTD   (United Kingdom)

^e AIXTRON AG   (Germany)

^f NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Characterization; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; ELECTROLUMINESCENCE; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

ELECTROLUMINESCENCE TEST (ELT); INTERFACES; SEMICONDUCTING III-V MATERIALS; TETRAMETHYLSILANE (TMS);

GALLIUM NITRIDE;

EID: 9944248993     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.037     Document Type: Conference Paper

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