ZnCdO/ZnO hetero- and quantum well structures for light-emitting applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6895, Issue , 2008, Pages

  Sadofev, S ^a   Kalusniak, S ^a   Puls, J ^a   Schafer P ^a   Blumstengel, S ^a   Rogaschewski, S ^a   Fan, Y H ^a   Henneberger, F ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

Author keywords

Lasing; Molecular beam epitaxy; Polarization fields; Quantum well structures; ZnCdO; ZnO

Indexed keywords

ANNEALING; CADMIUM COMPOUNDS; CURVE FITTING; ELECTRIC FIELDS; ELECTROACUPUNCTURE; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ELECTROMAGNETISM; ENERGY EFFICIENCY; ENERGY RESOURCES; GALLIUM ALLOYS; LIGHT EMISSION; MAGNETISM; MICROFLUIDICS; MOLECULAR BEAM EPITAXY; OXIDES; PHASE SEPARATION; PHASE STABILITY; PIGMENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SEPARATION; STANDARDS; STRUCTURE (COMPOSITION); THERMODYNAMIC STABILITY; ZINC; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

(LIQUID + LIQUID) EQUILIBRIUM; BAND GAPS; COMPOSITION RANGES; CRYSTALLINE QUALITY; HETERO-INTERFACES; LAYER-BY-LAYER GROWTH; LIGHT-EMITTING; LOW ENERGIES; LOW GROWTH TEMPERATURES; MOLE FRACTIONS; ORDERS-OF-MAGNITUDE; OXIDE MATERIALS; POLARIZATION INDUCED ELECTRIC FIELDS; POST GROWTH ANNEALING; QUANTUM WELL STRUCTURES; RADIATIVE EFFICIENCY; ROCKING CURVE WIDTH; SOLUBILITY LIMITS; THERMAL STABILITY; TIME SCALING; WURTZITE PHASE; ZNO SUBSTRATES;

EPITAXIAL GROWTH;

EID: 42149171076     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.774973     Document Type: Conference Paper

References (28)

1. S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schäfer, Y. G. Sadofyev, and F. Henneberger, "Growth of high-quality ZnMgO epilayers and ZnO/ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire," Appl. Phys. Lett. 87, p. 091903, 2005.
2. 0.4O heterointerface," Jpn. J. Appl. Phys. 43, p. L 1372, 2004.
3. S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schäfer, and F. Henneberger, "Visible band-gap ZnCdO heterostructures grown by molecular-beam epitaxy," Appl. Phys. Lett. 89, p. 201907, 2006.
4. 1-yO ternary alloy films," Appl. Phys. Lett. 78, pp. 1237 - 1239, 2001.
5. Th. Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, F. Bertram, D. Forster, J. Christen, and M. Schreck, "Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy," Appl. Phys. Lett. 83, pp. 3290 - 3292, 2003.
6. F. Bertram, S. Giemsch, D. Forster, J. Christen, R. Kling, C. Kirchner, and A. Waag, "Direct imaging of phase separation in ZnCdO layers," Appl. Phys. Lett. 88, p. 061915, 2006.
7. K. Sakurai, T. Kubo, D. Kajita, T. Tanabe, H. Takasu, Shizuo Fujita, and Shigeo Fujita, "Blue photoluminescence from ZnCdO films grown by molecular beam epitaxy," Jpn. J. Appl. Phys. 39, p. L 1146, 2000.
8. 0.05O/ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy," Appl. Phys. Lett. 87, p. 192106, 2005.
9. xO film growth using remote plasma-enhanced metalorganic chemical vapor deposition," Jpn. J. Appl. Phys. 43, p. L 1088, 2004.
10. S. Sadofev, P. Schäfer, Y.-H. Fan, S. Blumstengel, F. Henneberger, D. Schulz, and D. Klimm, "Radicalsource molecular beam epitaxy of ZnMgO and ZnCdO alloys on ZnO substrates," Appl. Phys. Lett. 91, p. 201923, 2007.
11. D. Schulz, S. Ganschow, D. Klimm, M. Neubert, M. Roßberg, M. Schmidbauer, and R. Fornari, "Bridgmangrown zinc oxide single crystals," J. Cryst. Growth 296, pp. 27 - 30, 2006.
12. 0.9O multiple quantum wells grown on ZnO substrates," Appl. Phys. Lett. 90, p. 211909, 2007.
13. H.-J. Ko, M.-S. Han, Y.-S. Park, Y.-S. Yu, B.-I. Kim, S. S. Kim, and J.-H. Kim, "Improvement of the quality of ZnO substrates by annealing," J. Cryst. Growth 269, pp. 493 - 498, 2004.
14. S. Graubner, C. Neumann, N. Volbers, B. K. Meyer, J. Biasing, and A. Krost, "Preparation of ZnO substrates for epitaxy: Structural, surface, and electrical properties," Appl. Phys. Lett. 90, p. 042103, 2007.
15. 1. A. Buyanova, J. P. Bergman, G. Pozina, W. M. Chen, S. Rawal, D. P. Norton, S. J. Pearton, A. Osinsky, and J. W. Dong, "Mechanism for radiative recombination in ZnCdO alloys," Appl. Phys. Lett. 90, p. 261907, 2007.
16. A. Ohtomo, M. Kawasaki, Y. Sakurai, I. Ohkubo, R. Shiroki, Y. Yoshida, T. Yasuda, Y. Segawa, and H. Koinuma, "Fabrication of alloys and superlattices based on ZnO towards utraviolet laser," Mat. Science and Engineering B56, pp. 263 - 266, 1998.
17. 3(0001) by using a MgO buffer layer," Appl. Phys. Lett. 76, pp. 559 - 561, 2000.
18. K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, K. Nakahara, and H. Takasu, "Improvement of electrical properties in ZnO thin films grown by radical source (RS)-MBE," phys. stat. sol. (a) 180, pp. 287 - 292, 2000.
19. F. Bernardini, V. Fiorentini, and D. Vanderbilt, "Spontaneous polarization and piezoelectric constants of III-V nitrides," Phys. Rev. B 56, pp. R10024 - R10027, 1997.
20. P. Gopal and N. A. Spaldin, "Polarization, piezoelectric constants, and elastic constants of ZnO, MgO, and CdO," J. Electronic Materials B 35, pp. 538 - 542, 2006.
21. S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, "Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures," Appl. Phys. Lett. 73, pp. 2006 - 2008, 1998.
22. 1-xN quantum wells," Phys. Rev. B 57, pp. R9435 - R9438, 1998.
23. P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, "High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy," Appl. Phys. Lett. 78, pp. 1252 - 1254, 2001.
24. 0.22O quantum wells," Phys. Rev. B 72, p. 241305, 2005.
25. A. Ohtomo, K. Tamura, M. Kawasaki, T. Makino, Y. Segawa, Z. K. Tang, G. K. L. Wong, Y. Matsumoto, and H. Koinuma, "Room-temperature stimulated emission of excitons in ZnO/(Mg,Zn)O superlattices," Appl. Phys. Lett. 77, pp. 2204 - 2206, 2000.
26. J. Cui, S. Sadofev, S. Blumstengel, J. Puls, and F. Henneberger, "Optical gain and lasing of ZnO/ZnMgO multiple quantum wells: From low to room temperature," Appl. Phys. Lett. 89, p. 051108, 2006.
27. E. V. Lutsenko, A. V. Danilchyk, N. P. Tarasuk, V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, L. Rahimzadeh Khoshroo, H. Kalisch, R. H. Jansen, Y. Dikme, B. Schineller, and M. Heuken, "Optically pumped InGaN/GaN MQW lift-off lasers grown on silicon substrates," Superlattices and Micro structures 41, pp. 400 - 406, 2007.
28. K. Kojima, M. Funato, Y. Kawakami, S. Masui, S. Nagahama, and T. Mukai, "Stimulated emission at 474 nm from an InGaN laser diode structure grown on a (1122) GaN substrate," Appl. Phys. Lett. 91, p. 251107, 2007.