Band coupling model of electron and hole mediated ferromagnetism in semiconductors: The case of GaN

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Wei, Su Huai ^a   Dalpian, Gustavo M ^a,b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSIDADE FEDERAL DO ABC   (Brazil)

Author keywords

Band coupling model; Diluted magnetic semiconductors; Electron; Ferromagnetism; GaN; Hole

Indexed keywords

ANTIFERROMAGNETISM; CARRIER CONCENTRATION; CHARGED PARTICLES; CRYSTALS; CUBIC BORON NITRIDE; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; FERROMAGNETISM; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAD; MAGNETIC MATERIALS; MAGNETIC SEMICONDUCTORS; MAGNETISM; MANGANESE; MANGANESE COMPOUNDS; METALLIC GLASS; METALS; NANOSTRUCTURED MATERIALS; NITRIDES; PHYSICAL PROPERTIES; PIGMENTS; RARE EARTH ELEMENTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SIPHONS; STORAGE ALLOCATION (COMPUTER); TECHNOLOGY; TRANSITION METALS;

(PL) PROPERTIES; (T ,S)-SPLITTING; ANTIFERROMAGNETIC (AFM); BAND STRUCTURE ENGINEERING; CARRIER DENSITY; CHEMICAL ORDERING; CONCENTRATION (COMPOSITION); CONDUCTION BAND EDGE (CBE); COUPLING MODELS; DILUTED MAGNETIC SEMICONDUCTORS (DMS); HOLE-INDUCED FERROMAGNETISM; HOLE-MEDIATED FERROMAGNETISM; KINETIC (POLYM.); MAGNETIC (CE); MAGNETIC DOPANTS; MAGNETO OPTICAL; MN-DOPED GAN (GAMNN); NITRIDE MATERIALS; OPTICAL INSTRUMENTATION; RARE-EARTH ELEMENTS (REE); SPINTRONIC APPLICATIONS; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31); WIDE-RANGE;

INTEGRATED OPTOELECTRONICS;

EID: 42149147287     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.763494     Document Type: Conference Paper

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