Electrical Characteristics of MILC Poly-Si TFTs with Long Ni-Offset Structure

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2344-2347

  Kim, Gi Bum ^a   Yoon, Yeo Geon ^a   Kim, Min Sun ^a   Jung, Hunjoon ^a   Lee, Seok Woon ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

Dopant effect; Low temperature; Metal induced lateral crystallization (MILC); Poly Si thin film transistors (TFTs)

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; LIQUID CRYSTAL POLYMERS; LOW TEMPERATURE EFFECTS; MICROSTRUCTURE; NICKEL COMPOUNDS; POLYSILICON; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

METAL-INDUCED LATERAL CRYSTALLIZATION (MILC); SUBTHRESHOLD SLOPES;

THIN FILM TRANSISTORS;

EID: 0346707545     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.818154     Document Type: Article

References (12)

1. P. Migliorato, S. W. B. Tam, O. K. B. Lui, T. M. Brown, M. J. Quinn, T. Shimoda, and H. Ohshima, "Device physics and modeling of poly-Si TFTs," in SID Tech. Digest, Boston, MA, May 1997, p. 171.
2. S. W. Lee and S. K. Joo, "Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization," IEEE Electron Device Lett., vol. 17, pp. 160-162, Apr. 1996.
3. T.-H. Inn, T.-K. Kim, B.-I. Lee, and S. K. Joo, "A study on the leakage current of poly-Si TFTs fabricated by metal induced lateral crystallization," Microelectron. Reliability, vol. 39, pp. 53-58, 1998.
4. S.-W. Lee, T.-H. Ihn, and S.-K. Joo, "Low-temperature dopant activation and its application to polycrystalline silicon thin film transistors," Appl. Phys. Lett., vol. 69, pp. 380-382, 1996.
5. C. Hayzelden and J. L. Batstone, "Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films," J. Appl. Phys., vol. 73, pp. 8279-8289, 1993.
6. M. Wong, Z. Jin, G. A. Bhat, P. C. Wong, and H. S. Kwok, "Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors," IEEE Trans. Electron Devices, vol. 47, pp. 1061-1067, June 2000.
7. T. Ma and M. Wong, "Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films," J. Appl. Phys., vol. 91, pp. 1236-1241, 2002.
8. J. A. Roth, G. L. Olson, D. C. Jacobson, and J. M. Poate, "Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation," Appl. Phys. Lett., vol. 57, pp. 1340-1342, 1990.
9. J. C. McCallum, "The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers," Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At., vol. 148, pp. 350-354, 1999.
10. G. L. Olson, S. A. Kokorowski, J. A. Roth, and L. D. Hess, "Laser-induced solid phase crystallization in amorphous silicon films," in Proc. Mater. Res. Soc. Symp., vol. 13, 1983, pp. 141-154.
11. B. Park, "Model for dopant-induced enhancement in solid-phase epitaxy recrystallization of amorphous Si," Jpn. J. Appl. Phys., vol. 35, pp. L1611-L1613, 1996.
12. M. Cardona and N. E. Christensen, "Acoustic deformation potentials and heterostructure band offsets in semiconductors," Phys. Rev. B, vol. 35, no. 12, pp. 6182-6194, 1987.