A 10 GHz dielectric resonator oscillator using GaN technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2004, Pages 1497-1500

  Rice, P ^a   Sloan, R ^a   Moore, M ^b   Barnes, A R ^b   Uren, M J ^b   Malbert, N ^c   Labat, N ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b QINETIQ   (United Kingdom)

^c UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

AlGaN GaN HEMT; Microwave FET dielectric resonator oscillator; Phase noise

Indexed keywords

DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

ALGAN/GAN; DIELECTRIC RESONATOR OSCILLATOR; MICROWAVE FET; PHASE NOISE;

OSCILLATORS (ELECTRONIC);

EID: 4544237739     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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