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Volumn 409, Issue 1-2, 2005, Pages 340-347

Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

(10) Chu, S N G a Ren, F b Pearton, S J c Kang, B S b Kim, S b Gila, B P c Abernathy, C R c Chyi, J I d Johnson, W J e Lin, J c

a Multiplex Inc (United States)

b J Crayton Pruitt Family Department of Biomedical Engineering (United States)

c UNIVERSITY OF FLORIDA (United States)

d NATIONAL CENTRAL UNIVERSITY (Taiwan)

e NITRONEX CORPORATION (United States)

Author keywords

2DEG; AlGaN GaN; Piezoelectric; Pressure sensor

Indexed keywords

ALUMINUM COMPOUNDS; ELASTICITY; ELECTRON MOBILITY; EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); MULTILAYERS; PIEZOELECTRICITY; POLARIZATION; SAPPHIRE; STRAIN; STRESS CONCENTRATION;

HETEROEPITAXIAL STRUCTURES; PIEZOELECTRIC POLARIZATION; PRESSURE SENSOR;

GALLIUM NITRIDE;

PRESSURE MEASUREMENT;

EID: 28544444425 PISSN: 09215093 EISSN: None Source Type: Journal
DOI: 10.1016/j.msea.2005.05.119 Document Type: Article

Times cited : (24)

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