Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1627-1631

  Chen, Hou Guang ^a   Ko, Tsung Shine ^b   Chang, Li ^b   Wu, Yue Han ^b   Lu, Tien Chang ^b   Kuo, Hao Chung ^b   Wang, Shing Chung ^b  

^a I SHOU UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Interface; A1. Line defects; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SUBSTRATES;

LINE DEFECTS; SEMICONDUCTING III-V MATERIALS;

MICROSTRUCTURE;

EID: 41449110731     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.178     Document Type: Article

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