MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1777-1780

  Suihkonen, S ^a   Svensk, O ^a   Torma P T ^a   Ali, M ^a   Sopanen, M ^a   Lipsanen, H ^a   Odnoblyudo, M A ^b,c   Bougrov, V E ^b,c  

^a AALTO UNIVERSITY   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

^c Optogan Oy   (Finland)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. InAlGaN

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

PRECURSOR FLOW; UNIFORM COMPOSITIONAL DEPTH;

SEMICONDUCTOR MATERIALS;

EID: 41449096804     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.122     Document Type: Article

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