Coulomb blockade in silicon nano-pillars

Applied Physics Letters

Volumn 74, Issue 15, 1999, Pages 2191-2193

  Pooley, D M ^a   Ahmed, H ^a   Mizuta, H ^b   Nakazato, K ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS;

COULOMB BLOCKADE; SILICON NANO-PILLARS; SILICON NITRIDE TUNNEL BARRIERS;

NANOSTRUCTURED MATERIALS;

EID: 0032614779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123797     Document Type: Article

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