Novel ultrahigh-density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 945-951

  Endoh, Tetsuo ^a   Kinoshita, Kazushi ^b   Tanigami, Takuji ^a   Wada, Yoshihisa ^b   Sato, Kota ^b   Yamada, Kazuya ^b   Yokoyama, Takashi ^a   Takeuchi, Noboru ^a   Tanaka, Kenichi ^b   Awaya, Nobuyoshi ^b   Sakiyama, Keizou ^b   Masuoka, Fujio ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

3 D device; Flash memory; S SGT; SGT

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); LOGIC GATES; LOGIC PROGRAMMING;

STACKED-SURROUNDING GATE TRANSISTORS (S-SGT);

FLASH MEMORY;

EID: 0038494755     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.809429     Document Type: Article

References (9)

1. T. Endoh, R. Shirota, S. Aritome, and F. Masuoka, "A study of high-performance NAND structured EEPROMS," IEICE Trans. Electron., vol. E75-2, pp. 1351-1357, Nov. 1992.
2. 2, 256-Mbit NAND flash with shallow trench isolation technology," IEEE J. Solid-State Circuits, vol. 34, pp. 1536-1543, Nov. 1999.
3. F. Masuoka, M. Momodomi, Y. Iwata, and R. Shirota, "New ultra high density EPROM and flash EEPROM with NAND structure cell," in IEDM Tech. Dig., 1987, pp. 552-555.
4. M. Momodomi, R. Kirisawa, R. Nakayama, S. Aritome, T. Endoh, Y. Itoh, Y. Iwata, H. Oodaira, T. Tanaka, M. Chiba, R. Shirota, and F. Masuoka, "New device technologies for 5V-only 4Mb EEPROM with NAND structured cell," in IEDM Tech. Dig., 1988, pp. 412-415.
5. A. Goda, W. Moriyama, H. Hazama, H. Iizuka, K. Shimizu, S. Aritome, and R. Shirota et al., "A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories," in IEDM Tech. Dig., 2000, pp. 772-775.
6. H. Pein and J. D. Plummer, "Performance of the 3D PENCIL flash EPROM cell and memory array," IEEE Trans. Electron Devices, vol. 42, pp. 1982-1991, Nov. 1995.
7. T. Endoh, M. Hioki, H. Sakuraba, M. Lenski, and F. Masuoka, "Floating channel type SGT flash memory," in Meeting Abst. 1999 Joint Int. Meeting (196th Meeting of the Electrochemical Society, 1999 Fall Meeting of the Electrochemical Society of Japan With Technical Cosponsorship of the Jpn. Soc. Applied Physics), vol. 99-2, HI, Oct. 17-22, 1999, Abst. 1323.
8. M. Hioki, T. Endoh, H. Sakuraba, M. Lenski, and F. Masuoka, "An analysis of program and erase operation for FC-SGT flash memory cells," in Proc. Int. Conf. Simulat. Semicond. Processes Devices, 2000, pp. 116-117.
9. T. Endoh, K. Kinoshita, T. Tanigami, Y. Wada, K. Sato, K. Yamada, T. Yokoyama, N. Takeuchi, K. Tanaka, N. Awaya, K. Sakiyama, and F. Masuoka, "Novel ultra high density flash memory with a Stacked-Surrounding Gate Transistor (S-SGT) structured cell," in IEDM Tech. Dig., 2001, pp. 33-36.