Electronic properties of the ultrathin silicon nitride films fabricated with ammonia plasma prenitridation

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

Volumn 27, Issue 4, 2007, Pages

  Song, Jie ^a   Wang, Jiumin ^a   Yu, Linwei ^a   Huang, Xinfan ^a   Li, Wei ^a   Chen, Kunji ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Ammonia nitrid; C V; Interface state density; PECVD; XPS

Indexed keywords

CHEMICAL ANALYSIS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC PROPERTIES; NITRIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS; SPECTROSCOPIC ELLIPSOMETRY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMMONIA NITRID; COMPOSITION; INTERFACE STATE DENSITY;

SILICON NITRIDE;

EID: 38549128391     PISSN: 10003819     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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