메뉴 건너뛰기




Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1445-1449

Theoretical analysis of oxygen-excess defects in SiO2 thin film by molecular orbital method

Author keywords

2.4 eV; Ab initio; Molecular orbital calculation; Oxygen excess defect; Photo CVD; Photoluminescence; SiO2

Indexed keywords

ANNEALING; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; OPTICAL VARIABLES MEASUREMENT; OXYGEN; PHOTOLUMINESCENCE; SILICA; THERMAL EFFECTS;

EID: 0030079698     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1445     Document Type: Article
Times cited : (6)

References (16)
  • 14
    • 4243065397 scopus 로고    scopus 로고
    • Revision G.3, made by M. J. Frisch et al.: Gaussian, Inc., Pittsburgh PA, 1992
    • Revision G.3, made by M. J. Frisch et al.: Gaussian, Inc., Pittsburgh PA, 1992.
  • 15
    • 84856121742 scopus 로고
    • ed. R. A. B. Devine Plenum Press, New York and London
    • 2, ed. R. A. B. Devine (Plenum Press, New York and London, 1988) p. 91
    • (1988) 2 , pp. 91
    • Robertson, J.1
  • 16
    • 84856121742 scopus 로고
    • ed. R. A. B. Devine Plenum Press, New York and London
    • 2, ed. R. A. B. Devine (Plenum Press, New York and London, 1988) p. 125
    • (1988) 2 , pp. 125
    • Griscom, D.D.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.