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Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1445-1449
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Theoretical analysis of oxygen-excess defects in SiO2 thin film by molecular orbital method
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Author keywords
2.4 eV; Ab initio; Molecular orbital calculation; Oxygen excess defect; Photo CVD; Photoluminescence; SiO2
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Indexed keywords
ANNEALING;
CALCULATIONS;
CHEMICAL VAPOR DEPOSITION;
CRYSTAL DEFECTS;
ELECTRON ENERGY LEVELS;
ELECTRON TRANSITIONS;
MATHEMATICAL MODELS;
OPTICAL VARIABLES MEASUREMENT;
OXYGEN;
PHOTOLUMINESCENCE;
SILICA;
THERMAL EFFECTS;
AB INITIO METHOD;
MOLECULAR ORBITAL METHOD;
OXYGEN EXCESS DEFECTS;
PHOTOLUMINESCENCE MEASUREMENT;
SEMI EMPIRICAL METHOD;
THIN FILMS;
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EID: 0030079698
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.1445 Document Type: Article |
Times cited : (6)
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References (16)
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