Electrical properties and leakage current behavior of un-doped and Ti-doped lead zirconate thin films synthesized by sol-gel method

Thin Solid Films

Volumn 516, Issue 12, 2008, Pages 4002-4010

  Mensur Alkoy, Ebru ^a,b   Shiosaki, Tadashi ^b  

^a KOCAELI UNIVERSITY   (Turkey)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Antiferroelectrics; Doping; Lead zirconate; Leakage current; Thin film

Indexed keywords

ANTIFERROELECTRIC MATERIALS; CRYSTALLIZATION; DOPING (ADDITIVES); LEAKAGE CURRENTS;

LEAD ZIRCONATE; PHASE TRANSITION TEMPERATURE;

THIN FILMS;

EID: 40749115076     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.08.046     Document Type: Article

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