Formation mechanism of one-dimensional Si Islands on a H/Si(001) surface

Physical Review Letters

Volumn 100, Issue 2, 2008, Pages

  Nara, Jun ^a,b   Kajiyama, Hiroshi ^c   Hashizume, Tomihiro ^d,e   Suwa, Yuji ^d   Heike, Seiji ^d   Matsuura, Shinobu ^f   Hitosugi, Taro ^g   Ohno, Takahisa ^a,b,h  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

^d HITACHI LTD   (Japan)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^f UNIVERSITY OF TOKYO   (Japan)

^g TOHOKU UNIVERSITY   (Japan)

^h INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIMERS; ONE DIMENSIONAL; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPIC ANALYSIS;

DIMER CHAINS; FIRST-PRINCIPLES CALCULATIONS; GROWTH STAGES;

SILICON;

EID: 40749085292     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.026102     Document Type: Article

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