Formation of clean dimers during gas-source growth of Si(001)

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 11, 2003, Pages 1153411-1153417

  Bowler, D R ^a,b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b LONDON CENTRE FOR NANOTECHNOLOGY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SILANE DERIVATIVE;

AB INITIO CALCULATION; ARTICLE; DIMERIZATION; GAS; HYDROGENATION; SCANNING TUNNELING MICROSCOPY; TEMPERATURE;

EID: 0037542513     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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