Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask

Thin Solid Films

Volumn 516, Issue 11, 2008, Pages 3512-3516

  Kim, D Y ^a   Ko, J H ^a   Park, M S ^a   Lee, N E ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Inductively coupled plasma; Infinite etch selectivity; ITO; Plasma etching

Indexed keywords

CHEMICAL REACTIONS; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING;

INFINITE ETCH SELECTIVITY; ORGANIC ETCH PRODUCTS;

INDIUM COMPOUNDS;

EID: 40649098622     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.08.021     Document Type: Article

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