Reactive ion etching of indium tin oxide by SiCl4-based plasmas - Substrate temperature effect

Vacuum

Volumn 51, Issue 4, 1998, Pages 777-779

  Kuo, Yue ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Texas AandM University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SPECTROSCOPY; FLUOROCARBONS; ION BOMBARDMENT; METHANE; PLASMA ETCHING; REACTION KINETICS; REACTIVE ION ETCHING; SILICON COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS (ESCA); INDIUM TIN OXIDE; SILICON TETRACHLORIDE;

SEMICONDUCTING TIN COMPOUNDS;

EID: 0032320757     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00289-9     Document Type: Article

References (8)

1. Kuo, Y., Sputtering and Plasma Processes, 1996, 11(5), 9.
2. Mohri, M., Kakinuma, H., Sakamoto, M. and Sawai, H., Jpn. J. Appl. Phys., 1990, 29, L1932.
3. Takabatake, M., Wakui, Y. and Konishi, N., J. Electrochem. Soc., 1995, 142(7), 2470.
4. CRC Handbook, 77th ed., 1996-1997.
5. Minami, T., Miyata, T., Iwamoto, A., Takata, S. and Nanto, H., Jpn. J. Appl. Phys., 1988, 27(9), L1753.
6. Tsou, L. Y., J. Electrochem. Soc., 1993, 140, 2965.
7. Kuo, Y., Jpn. J. Appl. Phys., 1997, 36(5B), L629part 2.
8. Kuo, Y., J. Electrochem. Soc., 1997, 144, 1411.