The influence of temperature and dielectric materials on stress induced voiding in Cu dual damascene interconnects

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 161-165

  Gan, Zhenghao ^a   Shao, Wei ^a   Mhaisalkar, S G ^a   Chen, Zhong ^a   Li, Hongyu ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Carbon doped oxide; Finite element analysis; Stress gradient; Stress induced voiding

Indexed keywords

CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; FINITE ELEMENT METHOD; OXIDES; SEMICONDUCTOR DOPING;

CARBON DOPED OXIDE; STRESS GRADIENT; STRESS INDUCED VOIDING;

OPTICAL INTERCONNECTS;

EID: 33644893600     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.162     Document Type: Conference Paper

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