Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

  Giacomini, Renato ^a,b   Martino, João Antonio ^b,c  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ETCHING; GATE DIELECTRICS; NUMERICAL METHODS; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

CORNER EFFECTS; TRAPEZOIDAL CROSS SECTIONS;

FIELD EFFECT TRANSISTORS;

EID: 40549138505     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2833317     Document Type: Article

References (16)

1. J. P. Colinge, Silicon on Insulator Technology: Materials to VLSI, 3rd ed., p. 2, Kluwer Academic Publishers, Norwell, MA (2004).
2. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon On Insulator Materials and Devices, p. 400, Kluwer Academic Publishers, Boston, MA (1995).
3. F. Balestra, S. Cristoloveanu, M. Benachir, and T. Elewa, IEEE Electron Device Lett. EDLEDZ 0741-3106, 8, 410 (1987).
4. L. Ge and J. Fossum, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.981219, 49, 287 (2002).
5. X. Liang and Y. Taur, IEEE Trans. Electron Devices IETDAI 0018-9383, 51, 1385 (2004).
6. J. G. Fossum, J. W. Yang, and V. P. Trivedi, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2003.820624, 24, 745 (2003).
7. W. Xiong, J. W. Park, and J. P. Colinge, Proceedings of the IEEE International SOI Conference, IEEE, pp. 111-113 (2003).
8. X. Wu, P. C. H. Chan, and M. Chan, Proceedings of the IEEE International SOI Conference, IEEE, pp. 151-152 (2003).
9. X. Wu, P. C. H. Chan, and M. Chan, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2004.841334, 52, 63 (2005).
10. H. S. Wong, M. H. White, T. J. Krutsick, and R. V. Booth, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(87)90132-8, 30, 953 (1987).
11. R. Giacomini and J. A. Martino, in Microelectronics: Technology and Devices, J. Diniz, P. French, D. Monteiro, N. Morimoto, and, J. Swart, Editors, PV 2006-4, pp. 275-281, The Electrochemical Society Proceedings Series, Pennington, NJ (2006).
12. M. G. C. Andrade and J. A. Martino, in Student Forum on Microelectronics, p. 308, Microelectronics Brazilian Society (2007).
13. Atlas Device Simulator User's Manual, v. 5.10.0.R, Silvaco International, Santa Clara, CA (2005).
14. Y. Taur, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.841310, 21, 245 (2000).
15. P. Francis, A. Terao, D. Flandre, and F. V. Wiele, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.285022, 41, 715 (1994).
16. M. Giacomini and J. A. Martino, in Microelectronics. Technology and Devices, J. K. Celler, S. Cristoloveanu, S. W. Bedell, F. Gámiz, B.-Y. Nguyen, and, Y. Omura, Editors, PV 2007-6, pp. 381-386, The Electrochemical Society Proceedings Series, Pennington, NJ (2007).