Non-vertical sidewall angle influence on triple-gate FinFETs corner effects

ECS Transactions

Volumn 6, Issue 4, 2007, Pages 381-386

  Giacomini, R ^a,b   Martino, J A ^b  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

FINFET;

CORNER EFFECTS; FABRICATION PROCESS; INCLINATION ANGLES; MULTIPLE GATES; NUMERIC SIMULATION; RECTANGULAR CROSS-SECTIONS; SIDEWALL ANGLES; VERTICAL DIRECTION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 45249111177     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728886     Document Type: Conference Paper

References (5)

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4. W. Xiong, J.W. Park, J P. Colinge, Proc of the IEEE International SOI Conference, pp. 111-113, (2003)
5. Atlas Device Simulator User's Manual, v. 5.10.0.R, Silvaco Int. Santa Clara, CA (2005).