Use of the 'mist' (liquid-source) deposition system to produce new high-dielectric devices: Ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 591-599

  Morrison, F D ^a   Scott, J F ^a   Alexe, M ^b   Leedham, T J ^c   Tatsuta, T ^d   Tsuji, O ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c Inorgtech Limited   (United Kingdom)

^d 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

Ferroelectric; Gate oxides; Photonic devices; Thin films

Indexed keywords

DEPOSITION; DIELECTRIC FILMS; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; PERMITTIVITY; POROUS SILICON; SOLUTIONS;

BUFFER LAYERS;

DIELECTRIC DEVICES;

EID: 0037393415     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00970-X     Document Type: Conference Paper

References (19)

1. MacMillan L.D., Paz De Araujo C.A., Roberts T., Cuchiaro J., Scott M.C., Scott J.F. Integrated Ferroelectrics. 2:1992;351-359.
2. Huffmann M. Integrated Ferroelectrics. 10:1995;39-53.
3. Zhou J., Sun C.Q., Pita K., Lam Y.L., Zhou Y., Ng S.L., Kam C.H., Li L.T., Gui Z.L. Appl. Phys. Lett. 78:2001;661-663.
4. Birner A., Wehrspohn R.B., Goesele U., Busch K. Adv. Mater. 13:2001;3776.
5. Schilling J., Mueller F., Matthias S., Wehrspohn R.B., Goesele U., Busch K. Appl. Phys. Lett. 78:2001;1180-1182.
6. Ottow S., Lehmann V., Foell H. Appl. Phys. A63:1996;153-159.
7. Waser R., Schneller T., Hoffmann-Eifert S., Ehrhart P. Integrated Ferroelectrics. 36:2001;3-20.
8. MRS Bull. 27 (2002) 186-229.
9. Wilk G.D., Wallace R.M., Anthony J.M. J. Appl. Phys. 89:2001;5243-5275.
10. Scott J.F. Ferroelectric Memories. 2000;Springer, London.
11. Williams P.A., Jones A.C., Crosbie M.J., Wright P.J., Bickley J.F., Steiner A., Davies H.O., Leedham T.J., Critchlow G.W. Chem. Vap. Deposition. 7:2001;205-209.
12. Ruh R., Corfield P.W.R. J. Am. Ceram. Soc. 53:1970;126-129.
13. Ohtaka O., Yamanaka T., Kume S. J. Ceram. Soc. Japan. 99:1996;826-827.
14. Curtis, et al. J. Am. Ceram. Soc. 37:1954;458.
15. Holland H.D., Gottfried D. Acta Crystallogr. 8:1955;291-300.
16. Teufer G. Acta Crystallogr. 15:1962;1187.
17. Mamott G.T., Barnes P., Tarling S.E., Jones S.L., Norman C.J. J. Mater. Sci. 26:1991;4054-4061.
18. Turrillas X., Barnes P., Tarling S.E., Jones S.L., Norman C.J., Ritter C. J. Mater. Sci. Lett. 12:1993;223-226.
19. Shimakawa Y., Kubo Y., Nakagawa Y., Kamiyama T., Asano H., Izumi F. Appl. Phys. Lett. 74:1999;1904-1906.