Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 55, Issue 2, 2008, Pages 489-493

  Chen, Tzu Chieh ^a   Lin, Yueh Ting ^a   Lin, Chung Yi ^a   Chen, W C ^a   Chen, Meei Ru ^a   Kao, Hui Ling ^a   Chyi, J I ^b   Hau, C H ^c  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; EPITAXIAL FILMS; GALLIUM NITRIDE; OSCILLATORS (ELECTRONIC); SENSORS; ULTRAVIOLET RADIATION;

HELICON SPUTTERING SYSTEM; OSCILLATION FREQUENCY; UV SENSORS;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 40549103181     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2008.666     Document Type: Article

References (19)

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