Deep reactive ion etching (DRIE) of high aspect ratio SiC microstructures using a time-multiplexed etch-passivate process

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1115-1118

  Evans, Laura J ^a   Beheim, Glenn M ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Aspect ratio; Bulk micromachining; Deep reactive ion etching (DRIE); MEMS

Indexed keywords

ASPECT RATIO; ETCHING; MEMS; MICROMACHINING; SILICON CARBIDE;

BULK MICROMACHINING; DEEP REACTIVE ION ETCHING (DRIE);

MICROSTRUCTURE;

EID: 37849011906     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1115     Document Type: Conference Paper

References (3)

1. A.A. Ayon, R. Braff, C.C.Lin, H.H. Sawin, and M.A. Schmidt: Journal of the Electrochemical Society Vol. 146 (1) (1999), pp. 339-349
2. F. Laermer and A. Schlip, Patent DE4241045, U.S. Patent 5,501,893 (1994)
3. G. Beheim, in The MEMS Handbook, edited by M. Gad-el-Hak. CRC Press, Boca Raton (2002), pp. 21-1 -21-12