Influence of surface additives iodine and indium on the initial growth in copper chemical vapor deposition

Applied Surface Science

Volumn 236, Issue 1-4, 2004, Pages 165-174

  Chang, Ting Yu ^a   Tze, Jan Jen ^a   Tsai, Dah Shyang ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Chemical vapor deposition; Copper; Resistivity; Surface morphology; Thin film

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRIC CONDUCTIVITY; GROWTH (MATERIALS); INDIUM COMPOUNDS; IODINE COMPOUNDS; NUCLEATION; SURFACE ACTIVE AGENTS; SURFACE PHENOMENA; SURFACE ROUGHNESS; SURFACES; THIN FILMS;

EXTRANUCLEATION; GROWTH RATES; PHOTOELECTRONS; SURFACE ADDITIVES;

ADDITIVES;

EID: 4043157731     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.04.022     Document Type: Article

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