Fracture toughness and crack growth phenomena of plasma-etched single crystal silicon

Sensors and Actuators, A: Physical

Volumn 83, Issue 1, 2000, Pages 194-199

  Fitzgerald, A M ^a   Dauskardt, R H ^b   Kenny, T W ^b  

^a Department of Aeronautics and Astronautics Department of Mechanical Engineering and Industrial for Computational and Mathematical Engineering   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK INITIATION; CRACK PROPAGATION; FRACTURE TOUGHNESS; MICROMACHINING; PLASMA ETCHING; REACTIVE ION ETCHING; SINGLE CRYSTALS; WEIBULL DISTRIBUTION;

DEEP REACTIVE ION PLASMA ETCH PROCESS; PLASMA-ETCHED SINGLE CRYSTAL SILICON;

SILICON SENSORS;

EID: 0033749884     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00383-0     Document Type: Article

References (11)

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