Rapid thermal annealing of arsenic implanted Si1-xGex epilayers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 122, Issue 4, 1997, Pages 639-642

  Zou, Lyu Fan ^a   Wang, Z G ^a   Sun, D Z ^a   Fan, T W ^a   Liu, X F ^a   Zhang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; COMPOSITION EFFECTS; GERMANIUM ALLOYS; ION IMPLANTATION; IONS; THERMAL EFFECTS;

CONCENTRATION PROFILES;

SILICON ALLOYS;

EID: 0031099941     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00827-0     Document Type: Article

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