Comparison of arsenic diffusion in Si1-xGex formed by epitaxy and Ge+ implantation

Journal of Applied Physics

Volumn 93, Issue 8, 2003, Pages 4526-4528

  J Mitchell, M ^a   Ashburn, P ^a   Bonar, J M ^a   Hemment, P L F ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DIFFUSION; EPITAXIAL GROWTH; GERMANIUM; ION IMPLANTATION; MATHEMATICAL MODELS;

ION BEAM SYNTHESIS;

SILICON COMPOUNDS;

EID: 0038680511     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1561996     Document Type: Article

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