Diffusion of boron in germanium and Si1-xGex (x>50%) alloys

Materials Research Society Symposium - Proceedings

Volumn 765, Issue , 2003, Pages 217-222

  Uppal, Suresh ^a   Willoughby, A F W ^a   Bonar, J M ^a   Cowern, N E B ^b   Morris, R J H ^c   Bollani, M ^d  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d L NESS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

BORON DIFFUSION; DIFFUSIVITY;

DIFFUSION IN SOLIDS;

EID: 0242406156     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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