Self-organized InAs quantum dots in a silicon matrix

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1202-1204

  Egorov, A Yu ^a   Kovsh, A R ^a   Ustinov, V M ^a   Zhukov, A E ^a   Maksimov, M V ^a   Cirlin, G E ^b   Ledentsov, N N ^a   Bimberg, D ^c   Werner, P ^d   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DEPOSITION; ELECTRIC EXCITATION; MONOLAYERS; MORPHOLOGY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

SELF-ORGANIZED THREE-DIMENSIONAL ISLAND MATCHING; SILICON MATRIX;

MOLECULAR BEAM EPITAXY;

EID: 0032640815     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00019-6     Document Type: Article

References (3)

1. N.N. Ledentsov, in: M. Scheffler, R. Zimmermann (Eds.), Proc. 23rd Internat. Conf. on the Physics of Semiconductors, vol. 1, Berlin, Germany, July 21-26, 1996, World Scientific, Singapore, 1996, p. 19.
2. Egorov A.Yu., Zhukov A.E., Kop'ev P.S., Ledentsov N.N., Maksimov M.V., Ustinov V.M. Semiconductors. 28(8):1994;1439-1444.
3. A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, M.V. Maksimov, G.E. Cirlin, N.N. Ledentsov, D. Bimberg, P. Werner, Zh.I. Alferov, Semiconductors (1998), in press.