Growth and characterization of InAs quantum dots on Si(001) substrates

Journal of Crystal Growth

Volumn 271, Issue 3-4, 2004, Pages 450-455

  Zhao, Z M ^a   Hul'ko, O ^a   Kim, H J ^a   Liu, J ^a   Sugahari, T ^a   Shi, B ^a   Xie, Y H ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A1. Low dimensional structures; A1. Nanomaterials; A3. Molecular beam epitaxy; A3. Semiconducting III V materials; B2. Semiconducting indium compounds

Indexed keywords

MOLECULAR BEAM EPITAXY; MONOLAYERS; PRESSURE EFFECTS; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

COARSENING; DOT SIZE DISTRIBUTION; LOW DIMENSIONAL STRUCTURES; SELF-ASSEMBLED QUANTUM DOTS (SAQD);

CRYSTAL GROWTH;

EID: 7644226521     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.013     Document Type: Article

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