Design for triple-valued NAND and NOR gates based on resonant tunneling devices

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue 12, 2007, Pages 1983-1987

  Lin, Mi ^a,b   Lu, Weifeng ^a   Sun, Lingling ^a,b  

^a HANGZHOU DIANZI UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Multiple valued logic; NAND; NOR; RT device; Switching sequence

Indexed keywords

COMPUTER SIMULATION; SPICE; VLSI CIRCUITS;

NAND; NOR; RT DEVICE; SWITCHING SEQUENCE;

RESONANT TUNNELING;

EID: 40049105711     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (19)

1. He Xiaoting. Digital circuits. Hangzhou: Zhejiang University Press, 2000 (in Chinese)
2. Chen Xiexiong, Shen Jizhong. Recent digital theory. Hangzhou: Zhejiang University Press, 2001 (in Chinese)
3. Mao Fayao, Ouyang Xingming, Ren Hongping. Digital logic. Wuhan: Huazhong University of Science Press, 1996 (in Chinese)
4. Maezawa K. Resonant tunneling diodes and their application to high-speed circuits. CSIC'05 Compound Semiconductor Integrated Circuit Symposium, 2005: 97
5. Li Ding, Mazumder P. A novel application of resonant tunneling device in high performance digital circuits. 2003 Third IEEE Conference on Nanotechnology, 2003, 2: 520
6. Li Singrong, Mazumder P, Kyounghoon Y. On the functional failure and switching time analysis of the MOBILE circuit. 2005 IEEE International Symposium on Circuits and Systems, 2005, 3: 2531
7. Avedillo M J, Quitana J M, Pettenghi H. Sell-latching operation of MOBILE circuits using series-connection of RTDs and transistors. IEEE Trans Circuits Syst, 2006, 53(5): 334
8. Choi S, Lee B, Kim T, et al. CML-type monostable bistable logic element (MOBILE) using InP-based monolithic RTD/HBT technology. Electron Lett, 2004, 40(13): 792
9. Mazumder P, Kulkarni S, Bhattacharya M, et al. Digital circuit applications of resonant tunneling devices. Proceedings of the IEEE, 1998, 86(4): 664
10. Sen S, Capasso F, Cho A, et al. Resonant tunneling device signal processing applications with reduced circuit complexity. IEEE Trans Electron Devices, 1987, 34: 2185
11. Potter R C, Lakhani A, Hier H. Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures. Appl Phys, 1990, 64: 3735
12. Lin H C. Resonant tunneling diodes for multi-valued digital applications. Proceedings of Twenty-Fourth International Symposium on Multiple-Valued Logic, 1994: 188
13. Bhattacharya M, Kulkarni S, Gonzalez A, et al. A prototyping technique for large-scale RTD-CMOS circuits. Proceedings of IEEE International Symposium on Circuits and Systems, 2000, 1: 635
14. Waho T, Chen K J, Yamamoto M. Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output. IEEE J Solid-State Circuits, 1998, 33: 268
15. Wei S J, Lin H C. A multi-state memory using resonant tunneling diode pair. IEEE International Sympoisum on Circuits and Systems, 1991, 5: 2924
16. Waho T, Hattori K, Honda K. Novel resonant-tunneling multiple-threshold logic circuit based on switching sequence detection. Proceedings of 30th IEEE International Symposium on Multiple-Valued Logic, 2000: 317
17. Wu Xunwei. The design theory of multiple logic circuits. Hangzhou: Hangzhou University Press, 1994 (in Chinese)
18. Waho T, Chen K J, Yamamoto M. A literal gate using resonant-tunneling devices. Proceedings of 26th International Symposium on Multiple-Valued Logic, 1996: 68
19. Lin Mi, Shen Jizhong, Wang Lin. Design of multiple-valued RTD inverters based on switching sequence. Journal of Zhejiang University (Science Edition), 2004, 31(1): 38 (in Chinese)