Literal gate using resonant-tunneling devices

Proceedings of The International Symposium on Multiple-Valued Logic

Volumn , Issue , 1996, Pages 68-73

  Waho, T ^a   Chen, K J ^a   Yamamoto, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT CONTROL; ELECTRON DEVICE MANUFACTURE; ELECTRON RESONANCE; ELECTRON TUNNELING; HIGH ELECTRON MOBILITY TRANSISTORS; SWITCHING FUNCTIONS; TUNNEL DIODES;

GATE VOLTAGE; LITERAL GATE; LITERAL WINDOW WIDTH; PEAK CURRENTS; RESONANT TUNNELING DIODE; RESONANT TUNNELING TRANSISTORS; SWITCHING SEQUENCE CONTROL;

LOGIC GATES;

EID: 0029716067     PISSN: 0195623X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)