메뉴 건너뛰기




Volumn 23, Issue 2, 2008, Pages 551-555

Electrical characterization of low defect density nonpolar (1120) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEFECT DENSITY; DOPING (ADDITIVES); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 39749088674     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0069     Document Type: Article
Times cited : (1)

References (14)
  • 3
    • 25444490371 scopus 로고    scopus 로고
    • Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN
    • G.A. Garret, H. Shen, M. Wraback, B. Imer, B. Haskell, J.S. Speck, S. Keller, S. Nakamura, and S.P. DenBaars: Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN. Phys. Status Solidi A 5, 846 (2005).
    • (2005) Phys. Status Solidi A , vol.5 , pp. 846
    • Garret, G.A.1    Shen, H.2    Wraback, M.3    Imer, B.4    Haskell, B.5    Speck, J.S.6    Keller, S.7    Nakamura, S.8    DenBaars, S.P.9
  • 4
    • 34547857814 scopus 로고    scopus 로고
    • Stability of (11̄00) m-plane GaN films grown by metalorganic chemical vapor deposition (MOCVD)
    • B. Imer, F. Wu, M.D. Craven, J.S. Speck, and S.P. DenBaars: Stability of (11̄00) m-plane GaN films grown by metalorganic chemical vapor deposition (MOCVD). Jpn. J. Appl. Phys. 45, 8644 (2006).
    • (2006) Jpn. J. Appl. Phys , vol.45 , pp. 8644
    • Imer, B.1    Wu, F.2    Craven, M.D.3    Speck, J.S.4    DenBaars, S.P.5
  • 5
    • 0001682067 scopus 로고    scopus 로고
    • Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN
    • C.Y. Hwang, M.J. Schurman, W.E. Mayo, Y.C. Lu, R.A. Stall, and T. Salagajj: Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN. J. Electron. Mater. 26, 243 (1997).
    • (1997) J. Electron. Mater , vol.26 , pp. 243
    • Hwang, C.Y.1    Schurman, M.J.2    Mayo, W.E.3    Lu, Y.C.4    Stall, R.A.5    Salagajj, T.6
  • 6
    • 67749117821 scopus 로고    scopus 로고
    • M.D. Craven, A. Chakraborty, B. Imer, F. Wu, S. Keller, U.K. Mishra, J.S. Speck, and S.P. DenBaars: Structural and electrical characterization of a-plane GaN grown on a-plane SiC. Phys. Status Solidi C 0(7), 2132 (2003).
    • M.D. Craven, A. Chakraborty, B. Imer, F. Wu, S. Keller, U.K. Mishra, J.S. Speck, and S.P. DenBaars: Structural and electrical characterization of a-plane GaN grown on a-plane SiC. Phys. Status Solidi C 0(7), 2132 (2003).
  • 7
    • 31644431517 scopus 로고    scopus 로고
    • Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy
    • K. Kusakabe and K. Okhawa: Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy. Jpn. J. Appl. Phys. 44, 7931 (2005).
    • (2005) Jpn. J. Appl. Phys , vol.44 , pp. 7931
    • Kusakabe, K.1    Okhawa, K.2
  • 9
    • 0000926633 scopus 로고    scopus 로고
    • Dislocation scattering in GaN
    • D.C. Look and J.R. Sizelove: Dislocation scattering in GaN. Appl. Phys. Lett. 82, 1237 (1999).
    • (1999) Appl. Phys. Lett , vol.82 , pp. 1237
    • Look, D.C.1    Sizelove, J.R.2
  • 10
    • 0032614963 scopus 로고    scopus 로고
    • Direct observation of localized high current densities in GaN films
    • E.G. Brazel, M.A. Chin, and V. Narayanamurti: Direct observation of localized high current densities in GaN films. Appl. Phys. Lett. 74, 2367 (1999).
    • (1999) Appl. Phys. Lett , vol.74 , pp. 2367
    • Brazel, E.G.1    Chin, M.A.2    Narayanamurti, V.3
  • 11
    • 0001576022 scopus 로고    scopus 로고
    • Charge accumulation at a threading edge dislocation in gallium nitride
    • K. Leung, A.F. Wright, and E.B. Stechel: Charge accumulation at a threading edge dislocation in gallium nitride. Appl. Phys. Lett. 74, 2495 (1999).
    • (1999) Appl. Phys. Lett , vol.74 , pp. 2495
    • Leung, K.1    Wright, A.F.2    Stechel, E.B.3
  • 12
    • 32444439030 scopus 로고    scopus 로고
    • Improved quality (112̄0) a-plane GaN with sidewall lateral epitaxial overgrowth
    • B. Imer, F. Wu, S.P. DenBaars, and J.S. Speck: Improved quality (112̄0) a-plane GaN with sidewall lateral epitaxial overgrowth. Appl. Phys. Lett. 88, 061908 (2006).
    • (2006) Appl. Phys. Lett , vol.88 , pp. 061908
    • Imer, B.1    Wu, F.2    DenBaars, S.P.3    Speck, J.S.4
  • 13
    • 79956015209 scopus 로고    scopus 로고
    • Threading dislocation reduction via laterally overgrown nonpolar (112̄0) a-plane GaN
    • M.D. Craven, S.H. Lim, F. Wu, J.S. Speck, and S.P. DenBaars: Threading dislocation reduction via laterally overgrown nonpolar (112̄0) a-plane GaN. Appl. Phys. Lett. 81, 1201 (2002).
    • (2002) Appl. Phys. Lett , vol.81 , pp. 1201
    • Craven, M.D.1    Lim, S.H.2    Wu, F.3    Speck, J.S.4    DenBaars, S.P.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.