Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 °C

Thin Solid Films

Volumn 516, Issue 10, 2008, Pages 3000-3004

  Heya, Akira ^a   Minamikawa, Toshiharu ^b   Niki, Toshikazu ^c   Minami, Shigehira ^c   Masuda, Atsushi ^d   Umemoto, Hironobu ^d   Matsuo, Naoto ^a   Matsumura, Hideki ^d  

^a UNIVERSITY OF HYOGO   (Japan)

^b INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

^c Ishikawa Seisakusho Ltd   (Japan)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Catalytic chemical vapor deposition; Low temperature process; Passivation; Silicon nitride; Step coverage; Trenched substrate

Indexed keywords

ASPECT RATIO; CATALYSIS; CHEMICAL VAPOR DEPOSITION; HEAT RADIATION; THIN FILMS;

CATALYTIC CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE PROCESS; STEP COVERAGE; TRENCHED SUBSTRATE;

SILICON NITRIDE;

EID: 39649114070     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.11.001     Document Type: Article

References (14)

1. Masuda A., Totsuka M., Oku T., Hattori R., and Matsumura H. Vacuum 74 (2004) 525
2. Matsumura H., and Tachibana H. Appl. Phys. Lett. 47 (1985) 833
3. Heya A., Niki T., Takano M., Yonezawa Y., Minamikawa T., Muroi S., Minami S., Izumi A., Masuda A., Umemoto H., and Matsumura H. Jpn. J. Appl. Phys. 43 (2004) L1546
4. Heya A., Niki T., Takano M., Yonezawa Y., Minamikawa T., Muroi S., Minami S., Ikari T., Izumi A., Masuda A., Umemoto H., and Matsumura H. Jpn. J. Appl. Phys. 44 (2005) 1923
5. Minamikawa T., Heya A., Niki T., Takano M., Yonezawa Y., Muroi S., Minami S., Masuda A., Umemoto H., and Matsumura H. Thin Solid Films 501 (2006) 154
6. Takano M., Niki T., Heya A., Osono T., Yonezawa Y., Minamikawa T., Muroi S., Minami S., Masuda A., Umemoto H., and Matsumura H. Jpn. J. Appl. Phys. 44 (2005) 4098
7. Osono T., Heya A., Niki T., Takano M., Minamikawa T., Muroi S., Masuda A., Umemoto H., and Matsumura H. Thin Solid Films 501 (2006) 55
8. Osono S., Uchiyama Y., Kitazoe M., Saito K., Hayama M., Masuda A., Izumi A., and Matsumura H. Thin Solid Films 430 (2003) 165
9. Wang Q., Ward S., Gedvilas L., Keyes B., Sanchez E., and Wang S. Appl. Phys. Lett. 84 (2004) 338
10. Kitazoe M., Osono S., Itoh H., Asari S., Saito K., and Hayama M. Thin Solid Films 501 (2006) 160
11. Heya A., Niki T., Yonezawa Y., Minamikawa T., Muroi S., Izumi A., Masuda A., Umemoto H., and Matsumura H. Jpn. J. Appl. Phys. 43 (2004) L1362
12. Nozaki Y., Kongo K., Miyazaki T., Kitazoe M., Horii K., Umemoto H., Masuda A., and Matsumura H. J. Appl. Phys. 88 (2000) 5437
13. Qi X., Chen Z., and Wang G. J. Mater. Sci. Technol. 19 (2003) 235
14. Nozaki Y., Kitazoe M., Horii K., Umemoto H., Masuda A., and Matsumura H. Thin Solid Films 395 (2001) 47