Highly moisture-resistive SiNx films prepared by catalytic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 10 B, 2004, Pages

  Heya, Akira ^a   Niki, Toshikazu ^a,b   Yonezawa, Yasuto ^a   Minamikawa, Toshiharu ^a   Muroi, Susumu ^a,c   Izumi, Akira ^a,d,e   Masuda, Atsushi ^a,d   Umemoto, Hironobu ^a,d   Matsumura, Hideki ^a,d  

^a INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Ishikawa Seisakusho Ltd   (Japan)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^e KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Barrier film; Catalytic chemical vapor deposition; Hot wire chemical vapor deposition; Moisture resistivity; Poly(ethylene terephthalate) (PET); Silicon nitride (SiNx)

Indexed keywords

APPROXIMATION THEORY; CATALYSTS; CHEMICAL VAPOR DEPOSITION; MOISTURE; POLYETHYLENE TEREPHTHALATES; STOICHIOMETRY;

BARRIER FILM; CATALYTIC CHEMICAL VAPOR DEPOSITION; HOT-WIRE CHEMICAL VAPOR DEPOSITION; MOISTURE RESISTIVITY;

SILICON NITRIDE;

EID: 10844288087     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1362     Document Type: Article

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