Moisture-resistive properties of SiNx films prepared by catalytic chemical vapor deposition below 100° C for flexible organic light-emitting diode displays

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1923-1927

  Heya, Akira ^a   Niki, Toshikazu ^b   Takano, Masahiro ^a   Yonezawa, Yasuto ^a   Minamikawa, Toshiharu ^a   Muroi, Susumu ^c   Minami, Shigehira ^c   Ikari, Tokuo ^d   Izumi, Akira ^e,f   Masuda, Atsushi ^e   Umemoto, Hironobu ^e   Matsumura, Hideki ^e  

^a INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Ishikawa Seisakusho Ltd   (Japan)

^d KURARAY CO LTD   (Japan)

^e JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^f KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Catalytic chemical vapor deposition; Hot wire chemical vapor deposition; Hydrogen; Moisture resistivity; Organic light emitting diode (OLED) display; Polycarbonate (PC); Silicon nitride (SiNx); Water vapor transmission rate (WVTR)

Indexed keywords

CATALYSIS; CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT EMITTING DIODES; POLYCARBONATES; REFRACTIVE INDEX; SILANES; X RAY PHOTOELECTRON SPECTROSCOPY;

CATALYTIC CHEMICAL VAPOR DEPOSITION; MOISTURE RESISTIVITY; ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY; WATER VAPOR TRANSMISSION RATE (WVTR);

SILICON NITRIDE;

EID: 21244504623     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1923     Document Type: Article

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