Highly moisture-resistive silicon nitride films prepared by catalytic chemical vapor deposition and application to gallium arsenide field-effect transistors

Vacuum

Volumn 74, Issue 3-4 SPEC. ISS., 2004, Pages 525-529

  Masuda, Atsushi ^a   Totsuka, Masahiro ^b   Oku, Tomoki ^b   Hattori, Ryo ^b   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Catalytic chemical vapor deposition; Etch rate; Field effect transistor; Gallium arsenide; Moisture resistivity; Passivation; Pressure cooker test; Silicon nitride; Stress

Indexed keywords

CATALYSIS; ETCHING; GATES (TRANSISTOR); MOISTURE; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; STRESSES; SYNTHESIS (CHEMICAL);

CATALYTIC CHEMICAL VAPOR DEPOSITION; ETCH RATE; MOISTURE RESISTIVITY; PRESSURE COOKER TESTS;

SILICON NITRIDE;

EID: 2442440668     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.023     Document Type: Article

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