Formation of highly moisture-resistive SiNx films on Si substrate by Cat-CVD at room temperature

Thin Solid Films

Volumn 501, Issue 1-2, 2006, Pages 154-156

  Minamikawa, Toshiharu ^a   Heya, Akira ^a   Niki, Toshikazu ^b   Takano, Masahiro ^a   Yonezawa, Yasuto ^a   Muroi, Susumu ^c   Minami, Shigehira ^c   Masuda, Atsushi ^d   Umemoto, Hironobu ^d   Matsumura, Hideki ^d  

^a INDUSTRIAL RESEARCH INSTITUTE OF ISHIKAWA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Ishikawa Seisakusho Ltd   (Japan)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Catalytic CVD; Low temperature deposition; Silicon nitride

Indexed keywords

CATALYSIS; CHEMICAL VAPOR DEPOSITION; COMPOSITION; MOISTURE; TEMPERATURE DISTRIBUTION; THIN FILMS;

CATALYTIC CVD; DEPOSITION RATE; INTERNAL STRESS; LOW-TEMPERATURE DEPOSITION;

SILICON NITRIDE;

EID: 32644432773     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.173     Document Type: Conference Paper

References (7)

1. S. Okada, and H. Matsumura Jpn. J. Appl. Phys. 36 1997 7035
2. T. Minamikawa, Y. Yonezawa, A. Heya, Y. Fujimori, T. Nakamura, A. Masuda, and H. Matsumura Thin Solid Films 395 2001 248
3. A. Heya, Y. Yonezawa, T. Minamikawa, T. Niki, S. Muroi, A. Izumi, A. Masuda, H. Umemoto, and H. Matsumura Jpn. J. Appl. Phys. 43 2004 L1362
4. A. Heya, Y. Yonezawa, T. Minamikawa, T. Niki, S. Muroi, S. Minami, A. Izumi, A. Masuda, H. Umemoto, and H. Matsumura Jpn. J. Appl. Phys. 43 2004 L1546
5. M. Shimbo, and T. Matsuo J. Electrochem. Soc. 130 1983 135
6. W.A. Lanford, and M.J. Rand J. Appl. Phys. 49 1978 2473
7. H. Umemoto, K. Ohara, D. Morita, Y. Nozaki, A. Masuda, and H. Matsumura J. Appl. Phys. 91 2002 1650