Monte Carlo simulation of double gate MOSFET including multi sub-band description

Journal of Computational Electronics

Volumn 5, Issue 4, 2006, Pages 439-442

  Saint Martin, Jerome ^a   Bournel, A ^a   Aubry Fortuna, V ^a   Monsef, F ^a   Chassat, C ^a   Dollfus, P ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

2D electron gas; Ballistic transport; Monte Carlo simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); MONTE CARLO METHODS;

DOUBLE GATE MOSFET; EQUILIBRIUM TRANSPORT; QUANTIZATION EFFECT;

MOSFET DEVICES;

EID: 34248657955     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0043-4     Document Type: Article

References (13)

1. ITRS 2005 Edition, http://public.itrs.net/
2. Saint-Martin, J., et al.: Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation. Solid-State Electron. 50(1), 94 (2006)
3. Saint-Martin, J., et al.: On the ballistic transport in nanometer-scaled DG MOSFET. IEEE Trans. Electron Dev. 51(7), 1148 (2004)
4. Saint-Martin, J., et al.: Multi sub-band Monte Carlo simulation of ultra-thin Double Gate MOSFET with 2D electron gas. Semicond. Sci. Technol. 21(4), L29 (2006)
5. Venugopal, R., et al.: Simulating quantum transport in nanoscale MOSFETs: Real vs. mode space approaches. J. Appl. Phys. 92(7), 3730 (2002)
6. Fischetti, M.V., Laux, S.E.: Monte Carlo study of electron transport in silicon inversion layers. Phys. Rev. B 48(4), 2244 (1993)
7. Monsef, F., et al.: Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation. J. Appl. Phys. 95(7), 35870 (2004)
8. x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation. J. Appl. Phys. 82(8), 3911 (1997)
9. Esseni, D., et al.: Physically based modeling of low field electron mobility in ultrathin single- and double gate SOI n-MOSFETs. IEEE Trans. Electron Dev. 50(12), 2445 (2003)
10. Donetti, L., et al.: Influence of acoustic phonon confinement on electron mobility in ultrathin silicon insulator layers. Appl. Phys. Lett. 88(12), 122108 (2006)
11. 2 interface. Phys. Rev. B 32(12), 8171 (1985)
12. Sakaki, H., et al.: Interface roughness scattering in GaAs/AlAs quantum wells. Appl. Phys. Lett. 51(23), 1934 (1987)
13. x MOS devices using Monte Carlo simulation. Solid-State Electron. 49(8), 1320 (2005)