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Volumn 2007, Issue , 2007, Pages 370-373

Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to γ-irradiation

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GAMMA RAYS; IRRADIATION; RADIATION DAMAGE; SENSITIVITY ANALYSIS; SPECTRUM ANALYSIS;

EID: 39549107335     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430955     Document Type: Conference Paper
Times cited : (9)

References (11)
  • 1
    • 33847413112 scopus 로고    scopus 로고
    • Application of Plasma-Doping (PLAD) Technique to Reduce Dark Current of CMOS Image Sensors
    • February
    • C. R. Moon, J. Jung, D. W. Kwon, J. Yoo, D. H. Lee and K. Kim, "Application of Plasma-Doping (PLAD) Technique to Reduce Dark Current of CMOS Image Sensors", IEEE Elec. Dev. Lett., Vol. 28, No. 2, pp. 114-116, February 2007.
    • (2007) IEEE Elec. Dev. Lett , vol.28 , Issue.2 , pp. 114-116
    • Moon, C.R.1    Jung, J.2    Kwon, D.W.3    Yoo, J.4    Lee, D.H.5    Kim, K.6
  • 2
    • 0034320941 scopus 로고    scopus 로고
    • Evaluation of Surface Generation Velocity of Sidewall Oxide Interfaces Formed by Dry Etching for Shallow Trench Isolation
    • November
    • L. S. Riley, S. Hall and J. Schitz, "Evaluation of Surface Generation Velocity of Sidewall Oxide Interfaces Formed by Dry Etching for Shallow Trench Isolation", Sol. St. Elec., Vol. 44, No. 11, pp. 2093-2095, November 2000.
    • (2000) Sol. St. Elec , vol.44 , Issue.11 , pp. 2093-2095
    • Riley, L.S.1    Hall, S.2    Schitz, J.3
  • 3
    • 0036624652 scopus 로고    scopus 로고
    • Enhanced Dark Current Generation in Proton-Irradiated CMOS Active Pixel Sensors
    • June
    • J. Bogaerts, B. Dierickx and R. Mertens, "Enhanced Dark Current Generation in Proton-Irradiated CMOS Active Pixel Sensors", IEEE. Trans. Nucl. Sci., Vol. 49, No. 3, pp. 1513-1521, June 2002.
    • (2002) IEEE. Trans. Nucl. Sci , vol.49 , Issue.3 , pp. 1513-1521
    • Bogaerts, J.1    Dierickx, B.2    Mertens, R.3
  • 4
    • 0037250443 scopus 로고    scopus 로고
    • Total Dose and Displacement Damage Effects in a Radiation-Hardened CMOS APS
    • January
    • J. Bogaerts, B. Dierickx, G. Meynants, and D. Uwaerts, "Total Dose and Displacement Damage Effects in a Radiation-Hardened CMOS APS", IEEE Trans. Elec. Dev., Vol. 50 No. 1, pp. 84-90, January 2003.
    • (2003) IEEE Trans. Elec. Dev , vol.50 , Issue.1 , pp. 84-90
    • Bogaerts, J.1    Dierickx, B.2    Meynants, G.3    Uwaerts, D.4
  • 5
    • 39549086075 scopus 로고
    • Photocurrent in a Diffused p-n Junction
    • A. Sinha, S. K. Chatopadyaya, "Photocurrent in a Diffused p-n Junction", Sol. St. Elec., Vol. 19. pp. 345-346, 1976.
    • (1976) Sol. St. Elec , vol.19 , pp. 345-346
    • Sinha, A.1    Chatopadyaya, S.K.2
  • 6
    • 0026953317 scopus 로고
    • +-P Diffused Junction Silicon Solar Cells
    • +-P Diffused Junction Silicon Solar Cells", Sol. St. Elec., Vol. 35, No. 11, pp. 1661-1665, 1992.
    • (1992) Sol. St. Elec , vol.35 , Issue.11 , pp. 1661-1665
    • Zhang, X.1
  • 7
    • 0012855406 scopus 로고    scopus 로고
    • Radiation-Induced Degradation Effects in CMOS Active Pixel Sensors and Design of a Radiation Tolerant Image Sensor
    • PhD thesis, Katholieke Univ. Leuven, pp, April
    • J.Bogaerts. "Radiation-Induced Degradation Effects in CMOS Active Pixel Sensors and Design of a Radiation Tolerant Image Sensor". PhD thesis, Katholieke Univ. Leuven, pp. 94-100, April 2002.
    • (2002) , pp. 94-100
    • Bogaerts, J.1
  • 8
    • 3042820891 scopus 로고    scopus 로고
    • Gamma Radiation-induced Changes in the Electrical and Optical Properties of Tellurium Dioxide Thin Films
    • December
    • K. Arshak, O. Korostynska, "Gamma Radiation-induced Changes in the Electrical and Optical Properties of Tellurium Dioxide Thin Films", IEEE Sensor Journal, Vol. 3, No. 6, December 2003.
    • (2003) IEEE Sensor Journal , vol.3 , Issue.6
    • Arshak, K.1    Korostynska, O.2
  • 9
    • 0036136173 scopus 로고    scopus 로고
    • Defect Assessment of Irradiated STI Diodes
    • January
    • H. Ohyama et al., "Defect Assessment of Irradiated STI Diodes", Nuc Inst. Meth. B, Vol. 186, No. 1-4, pp. 424-428, January 2002.
    • (2002) Nuc Inst. Meth. B , vol.186 , Issue.1-4 , pp. 424-428
    • Ohyama, H.1
  • 10
    • 39549097620 scopus 로고    scopus 로고
    • Fixed-Pattern Noise Induced by Transmission Gate in Pinned 4T CMOS Image Sensor Pixels
    • September
    • X. Wang, P. R. Rao and A. J.P. Theuwissen, "Fixed-Pattern Noise Induced by Transmission Gate in Pinned 4T CMOS Image Sensor Pixels", Proc. ESSDERC., pp. 331-334, September 2006.
    • (2006) Proc. ESSDERC , pp. 331-334
    • Wang, X.1    Rao, P.R.2    Theuwissen, A.J.P.3
  • 11
    • 0442279708 scopus 로고    scopus 로고
    • The Analysis of Dark Signals in the CMOS APS Imagers From the Characterization of Test Structures
    • February
    • H. I. Kwon, I. M. Kang, B. G. Park, J. D. Lee and S. S. Park, "The Analysis of Dark Signals in the CMOS APS Imagers From the Characterization of Test Structures", IEEE Trans. Elec. Dev., Vol. 51, No. 2, pp. 178-184, February 2004.
    • (2004) IEEE Trans. Elec. Dev , vol.51 , Issue.2 , pp. 178-184
    • Kwon, H.I.1    Kang, I.M.2    Park, B.G.3    Lee, J.D.4    Park, S.S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.