Defect assessment of irradiated STI diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 424-428

  Ohyama, H ^a   Hayama, K ^a   Miura, T ^a   Simoen, E ^b   Claeys, C ^b,c   Poyai, A ^b,c   Nakabayashi, M ^d   Kobayashi, K ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d MITSUBISHI ELECTRIC CORPORATION   (Japan)

^e NEC IC Microcomputer Systems Ltd   (Japan)

Author keywords

Diode; Electrons; Neutrons; Protons; Radiation damage; Shallow trench isolation

Indexed keywords

CHARGED PARTICLES; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; IRRADIATION; NEUTRONS; RADIATION DAMAGE;

SHALLOW TRENCH ISOLATION (STI) DIODES;

SEMICONDUCTOR DIODES;

EID: 0036136173     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00863-1     Document Type: Article

References (8)