Application of plasma-doping (PLAD) technique to reduce dark current of CMOS image sensors

IEEE Electron Device Letters

Volumn 28, Issue 2, 2007, Pages 114-116

  Moon, C R ^a   Jung, Jongwan ^b   Kwon, Doo Won ^a   Yoo, Jongryeol ^a   Lee, Duck Hyung ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

^b Sejong University   (South Korea)

Author keywords

CMOS image sensors (CISs); Dark current; Photodiode; Plasma doping (PLAD); Shallow trench isolation (STI); Temporal noise

Indexed keywords

DARK CURRENTS; IMAGE SENSORS; PHOTODIODES; PIXELS; SEMICONDUCTOR DOPING;

PLASMA-DOPING TECHNIQUE; SHALLOW TRENCH ISOLATION; TEMPORAL NOISE;

CMOS INTEGRATED CIRCUITS;

EID: 33847413112     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.889241     Document Type: Article

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