Evaluation of surface generation velocity of sidewall oxide interfaces formed by dry etching for shallow trench isolation

Solid-State Electronics

Volumn 44, Issue 11, 2000, Pages 2093-2095

  Riley, L S ^a   Hall, S ^a   Schitz, J ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; DRY ETCHING; HYDROGEN; INTERFACES (MATERIALS); OPTIMIZATION; TRANSIENTS;

CAPACITANCE-TRANSIENT METHOD; SHALLOW TRENCH ISOLATION; SURFACE GENERATION VELOCITY;

MOS CAPACITORS;

EID: 0034320941     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00173-8     Document Type: Article

References (7)

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