Gamma radiation-induced changes in the electrical and optical properties of tellurium dioxide thin films

IEEE Sensors Journal

Volumn 3, Issue 6, 2003, Pages 717-721

  Arshak, Khalil ^a   Korostynska, Olga ^a  

^a UNIVERSITY OF LIMERICK   (Ireland)

Author keywords

Dosimetry; Gamma radiation; Optical band gap; Tellurium dioxide; Thin films

Indexed keywords

CHARGED PARTICLES; CRYSTALLINE MATERIALS; DENSITY (OPTICAL); DEPOSITION; DOSIMETRY; ELECTRIC POTENTIAL; GAMMA RAYS; IRRADIATION; OPTOELECTRONIC DEVICES; RAMAN SCATTERING; VACUUM; X RAY DIFFRACTION; X RAYS;

BAND GAP; FILM THICKNESS; HIGH-ENERGY RADIATION; PHOTO-RADIATION;

THIN FILMS;

EID: 3042820891     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2003.820327     Document Type: Conference Paper

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