Large bandgap bowing of inxGa1-xN films and growth of blue/green inxGa1-xN/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1412-1415

  Lee, Kang Jea ^a   Oh, Tae Su ^a   Kim, Tae Ki ^a   Yang, Gye Mo ^a   Lim, Kee Young ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP ENERGY; HIGH DISLOCATION DENSITY; HIGHLY TENSILE STRAINED GAN/SI; THERMAL EXPANSION COEFFICIENTS; 61.10.NZ; 68.35.GY; 68.55.JK; 71.20.BR; 78.30.FS; 78.55.CR;

FILM GROWTH; HETEROJUNCTIONS; LATTICE CONSTANTS; PHONONS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EXPANSION; CRACKS; ENERGY GAP; GALLIUM NITRIDE; METALLIC FILMS; SINGLE CRYSTALS;

GALLIUM NITRIDE; SILICON;

EID: 33746372975     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565122     Document Type: Conference Paper

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