Effect of inter-electrode spacing on structural and electrical properties of RF sputtered AlN films

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 3, 2008, Pages 261-265

  Kar, J P ^a   Mukherjee, S ^b   Bose, G ^a   Tuli, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b University of Oklahoma   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CAPACITANCE-VOLTAGE MEASUREMENTS; CRYSTALLINITY; INTERFACE STATE DENSITY;

CHARGE DENSITY; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SPUTTERING; SUBSTRATES; SURFACE ROUGHNESS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 38949209464     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9280-y     Document Type: Article

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